N-channel SuperMESH™ Power MOSFET featuring 900V drain-source breakdown voltage and 2.1A continuous drain current. Offers a low 5 Ohm typical drain-source on-resistance and 70W maximum power dissipation. Designed for through-hole mounting in a TO-220 package, this RoHS compliant component has a gate-source voltage rating of 30V and a threshold voltage of 3.75V. Key switching parameters include a 21ns turn-on delay and 40ns fall time.
Stmicroelectronics STP2NK90Z technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 2.1A |
| Current Rating | 2.1A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 6.5R |
| Drain to Source Voltage (Vdss) | 900V |
| Drain-source On Resistance-Max | 5R |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 15.75mm |
| Input Capacitance | 485pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 70W |
| Radiation Hardening | No |
| Rds On Max | 6.5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 21ns |
| DC Rated Voltage | 900V |
| Width | 4.6mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STP2NK90Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
