
N-channel power MOSFET featuring 200V drain-source breakdown voltage and 30A continuous drain current. Offers a low 75mΩ maximum drain-source on-resistance. This TO-220 package component supports through-hole mounting and operates within a -55°C to 150°C temperature range, with a maximum power dissipation of 125W. Includes fast switching characteristics with turn-on delay of 35ns and fall time of 8.8ns.
Stmicroelectronics STP30NF20 technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 30A |
| Current Rating | 30A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 75mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 75mR |
| Fall Time | 8.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 15.75mm |
| Input Capacitance | 1.597nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Radiation Hardening | No |
| Rds On Max | 75mR |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 35ns |
| DC Rated Voltage | 200V |
| Width | 4.6mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STP30NF20 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
