N-channel MOSFET featuring 300V drain-source breakdown voltage and 30A continuous drain current. Offers a low 90mΩ maximum drain-source on-resistance. This component is housed in a TO-220 package for through-hole mounting and supports a maximum power dissipation of 160W. Key switching characteristics include a 25ns turn-on delay and 65ns turn-off delay.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power160W
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Technical Specifications
Stmicroelectronics STP30NM30N technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 90mR |
| Drain to Source Voltage (Vdss) | 300V |
| Drain-source On Resistance-Max | 90mR |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 15.75mm |
| Input Capacitance | 2.5nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 160W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 160W |
| Radiation Hardening | No |
| Rds On Max | 90mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 25ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP30NM30N Datasheet
Download the complete datasheet for Stmicroelectronics STP30NM30N to view detailed technical specifications.
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