The STP30NM60ND is a 600V N-channel MOSFET with a continuous drain current of 25A. It features a drain to source breakdown voltage of 600V and a drain to source resistance of 130mR. The device has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It is packaged in a TO-220AB flange mount with a rail/Tube packaging style.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power190W
Quick Jump:
Technical Specifications
Stmicroelectronics STP30NM60ND technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 25A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 130mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 75ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 2.8nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 190W |
| Rds On Max | 130mR |
| RoHS Compliant | No |
| Series | FDmesh™ II |
| Turn-Off Delay Time | 110ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Stmicroelectronics STP30NM60ND Datasheet
Download the complete datasheet for Stmicroelectronics STP30NM60ND to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.