N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 29A continuous drain current. This TO-220 package component offers a low 110mΩ maximum drain-source on-resistance and 190W power dissipation. It includes a fast diode and operates within a temperature range of -55°C to 150°C. Key switching parameters include a 30ns turn-on delay and 61.8ns fall time.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power190W
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Technical Specifications
Stmicroelectronics STP34NM60ND technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 29A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 110mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 110MR |
| Fall Time | 61.8ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 15.75mm |
| Input Capacitance | 2.785nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 190W |
| Radiation Hardening | No |
| Rds On Max | 110mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | FDmesh™ II |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 111ns |
| Turn-On Delay Time | 30ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP34NM60ND Datasheet
Download the complete datasheet for Stmicroelectronics STP34NM60ND to view detailed technical specifications.
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