Automotive N-channel enhancement mode power MOSFET featuring 40V drain-source voltage and 120A continuous drain current. This single-element transistor utilizes STripFET process technology and offers a low drain-source on-resistance of 1.8 mΩ at 10V. Packaged in a TO-220AB through-hole configuration with 3 pins and a tab, it supports a wide operating temperature range from -55°C to 175°C. Maximum power dissipation is rated at 300W.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STP360N4F6 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220AB
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.4(Max)
Package Width (mm)
4.6(Max)
Package Height (mm)
9.15(Max)
Seated Plane Height (mm)
19.68(Max)
Pin Pitch (mm)
2.7(Max)
Package Weight (g)
1.9
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-220AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
STripFET
Maximum Drain Source Voltage
40V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
120A
Maximum Gate Threshold Voltage
4.5V
Maximum Drain Source Resistance
1.8@10VmOhm
Typical Gate Charge @ Vgs
304@10VnC
Typical Gate Charge @ 10V
304nC
Typical Input Capacitance @ Vds
17800@25VpF
Maximum Power Dissipation
300000mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
SCR76
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
Yes
AEC Qualified
Yes
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Stmicroelectronics STP360N4F6 Datasheet
Download the complete datasheet for Stmicroelectronics STP360N4F6 to view detailed technical specifications.
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