N-channel Power MOSFET featuring 800V drain-source breakdown voltage and 2.5A continuous drain current. This through-hole component offers a typical 2.8 Ohm drain-source resistance, with a maximum of 3.5 Ohm. Operating across a wide temperature range from -55°C to 150°C, it boasts a 60W maximum power dissipation and 130pF input capacitance. Designed for efficiency, it exhibits fast switching characteristics with a 20.5ns turn-off delay and 8.5ns turn-on delay. Packaged in a TO-220-3 configuration, this RoHS compliant device is lead-free.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP3N80K5 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
2.5A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
2.8R
Drain to Source Voltage (Vdss)
800V
Fall Time
25ns
Gate to Source Voltage (Vgs)
30V
Height
15.75mm
Input Capacitance
130pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
3.5R
RoHS Compliant
Yes
Series
SuperMESH5™
Turn-Off Delay Time
20.5ns
Turn-On Delay Time
8.5ns
Weight
0.01164oz
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP3N80K5 Datasheet
Download the complete datasheet for Stmicroelectronics STP3N80K5 to view detailed technical specifications.
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