N-channel power MOSFET featuring 40V drain-source breakdown voltage and 120A continuous drain current. This component offers a low 1.7mΩ drain-source on-resistance and is housed in a TO-220 package for through-hole mounting. Operating across a wide temperature range from -55°C to 175°C, it supports a maximum power dissipation of 300W. The device is RoHS compliant and lead-free.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP400N4F6 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 120A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 1.7mR |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 1.7mR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 15.75mm |
| Input Capacitance | 20nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 1.7mR |
| RoHS Compliant | Yes |
| Series | DeepGATE™, STripFET™ VI |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP400N4F6 Datasheet
Download the complete datasheet for Stmicroelectronics STP400N4F6 to view detailed technical specifications.
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