N-channel power MOSFET featuring 600V drain-source voltage and 34A continuous drain current. This through-hole component offers a low 0.078 Ohm typical drain-source resistance and a maximum power dissipation of 250W. Operating across a wide temperature range from -55°C to 150°C, it is housed in a TO-220 package. Key switching characteristics include a 20.5ns turn-on delay and an 11ns fall time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP40N60M2 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 34A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 88mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 2.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 88mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II Plus |
| Turn-Off Delay Time | 96ns |
| Turn-On Delay Time | 20.5ns |
| Weight | 0.01164oz |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP40N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STP40N60M2 to view detailed technical specifications.
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