
N-CHANNEL Power MOSFET featuring 120V drain-source breakdown voltage and 40A continuous drain current. Offers low 32mR drain-to-source resistance and 150W maximum power dissipation. Designed with low gate charge, exhibiting 28ns turn-on delay and 28ns fall time. Packaged in a TO-220AB through-hole mount, this RoHS compliant component operates from -55°C to 175°C.
Stmicroelectronics STP40NF12 technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 40A |
| Current Rating | 40A |
| Drain to Source Breakdown Voltage | 120V |
| Drain to Source Resistance | 32mR |
| Drain to Source Voltage (Vdss) | 120V |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.88nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 32mR |
| RoHS Compliant | Yes |
| Series | STripFET™ II |
| Turn-Off Delay Time | 84ns |
| Turn-On Delay Time | 28ns |
| DC Rated Voltage | 120V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STP40NF12 to view detailed technical specifications.
No datasheet is available for this part.
