N-channel power MOSFET featuring 650V drain-source breakdown voltage and 33A continuous drain current. Offers a low 0.070 Ohm typical drain-source on-resistance, with a maximum of 79mR. Designed for through-hole mounting in a TO-220 package, this component boasts a maximum power dissipation of 190W and operates across a wide temperature range from -55°C to 150°C. Key switching characteristics include a 13ns fall time, 65ns turn-off delay, and 61ns turn-on delay, with an input capacitance of 4.65nF.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power190W
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Technical Specifications
Stmicroelectronics STP42N65M5 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 33A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 70mR |
| Drain to Source Voltage (Vdss) | 650V |
| Drain-source On Resistance-Max | 79mR |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 9.15mm |
| Input Capacitance | 4.65nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 190W |
| Radiation Hardening | No |
| Rds On Max | 79mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 61ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP42N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STP42N65M5 to view detailed technical specifications.
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