N-channel power MOSFET featuring 100V drain-source breakdown voltage and 45A continuous drain current. This component offers a low 0.013 Ohm typical drain-source on-resistance and 18mR maximum. Designed for through-hole mounting in a TO-220 package, it operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 60W. Key switching parameters include an 8ns fall time, 15ns turn-on delay, and 24ns turn-off delay.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP45N10F7 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 45A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 15.75mm |
| Input Capacitance | 1.64nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 18mR |
| RoHS Compliant | Yes |
| Series | DeepGATE™, STripFET™ VII |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.01164oz |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP45N10F7 Datasheet
Download the complete datasheet for Stmicroelectronics STP45N10F7 to view detailed technical specifications.
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