The STP4NB100 is a TO-220AB packaged N-channel power MOSFET with a maximum operating temperature range of -65°C to 150°C. It has a continuous drain current rating of 3.8A and a maximum power dissipation of 125W. The device features a drain to source breakdown voltage of 1kV and a drain to source resistance of 4.4 ohms. It is RoHS compliant and available in a package quantity of 50 units per rail/tube packaging.
PackageTO-220AB
Current Rating3.8A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP4NB100 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 3.8A |
| Current Rating | 3.8A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 4.4R |
| Drain to Source Voltage (Vdss) | 1kV |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.4nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Rds On Max | 4.4R |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| DC Rated Voltage | 1kV |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP4NB100 Datasheet
Download the complete datasheet for Stmicroelectronics STP4NB100 to view detailed technical specifications.
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