N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 3.8A continuous drain current. This through-hole component offers a low 2.8 ohm Rds On (max) and 80W power dissipation. It operates within a temperature range of -65°C to 150°C and is housed in a TO-220AB package. Key electrical characteristics include 400pF input capacitance, 5ns fall time, and 11ns turn-on delay time.
PackageTO-220AB
Current Rating3.8A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP4NB50 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
3.8A
Current Rating
3.8A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
2.5R
Drain to Source Voltage (Vdss)
500V
Fall Time
5ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
400pF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
80W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
80W
Radiation Hardening
No
Rds On Max
2.8R
RoHS Compliant
No
Series
PowerMESH™
Turn-On Delay Time
11ns
DC Rated Voltage
500V
Compliance
RoHS
Not CompliantNo
Datasheet
Stmicroelectronics STP4NB50 Datasheet
Download the complete datasheet for Stmicroelectronics STP4NB50 to view detailed technical specifications.
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