N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 3.8A continuous drain current. This through-hole component offers a low 2.8 ohm Rds On (max) and 80W power dissipation. It operates within a temperature range of -65°C to 150°C and is housed in a TO-220AB package. Key electrical characteristics include 400pF input capacitance, 5ns fall time, and 11ns turn-on delay time.
PackageTO-220AB
Current Rating3.8A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP4NB50 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 3.8A |
| Current Rating | 3.8A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 2.5R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 400pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 80W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 80W |
| Radiation Hardening | No |
| Rds On Max | 2.8R |
| RoHS Compliant | No |
| Series | PowerMESH™ |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Stmicroelectronics STP4NB50 Datasheet
Download the complete datasheet for Stmicroelectronics STP4NB50 to view detailed technical specifications.
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