N-channel SuperMESH Power MOSFET featuring 800V drain-source breakdown voltage and 3A continuous drain current. This through-hole component offers a maximum on-resistance of 3.5 Ohms and 25W power dissipation, suitable for operation between -55°C and 150°C. The TO-220FP package houses a device with fast switching characteristics, including a 13ns turn-on delay and 32ns fall time. RoHS compliant and lead-free.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power25W
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Technical Specifications
Stmicroelectronics STP4NK80ZFP technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 3.5R |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 3.5R |
| Fall Time | 32ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.3mm |
| Input Capacitance | 575pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| Rds On Max | 3.5R |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 13ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP4NK80ZFP Datasheet
Download the complete datasheet for Stmicroelectronics STP4NK80ZFP to view detailed technical specifications.
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