N-channel power MOSFET featuring 250V drain-source breakdown voltage and 45A continuous drain current. Offers a low 69mΩ maximum drain-source on-resistance and 160W power dissipation. This TO-220 package MOSFET boasts a 20V gate-source voltage rating and 2.67nF input capacitance, with typical turn-on delay of 45ns and turn-off delay of 63ns. Designed for through-hole mounting, it operates from -55°C to 150°C and is RoHS compliant.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power160W
Quick Jump:
Technical Specifications
Stmicroelectronics STP50NF25 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
45A
Drain to Source Breakdown Voltage
250V
Drain to Source Resistance
69mR
Drain to Source Voltage (Vdss)
250V
Drain-source On Resistance-Max
69MR
Dual Supply Voltage
250V
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Height
15.75mm
Input Capacitance
2.67nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
160W
Mount
Through Hole
Nominal Vgs
3V
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
160W
Radiation Hardening
No
Rds On Max
69mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Termination
Through Hole
Threshold Voltage
3V
Turn-Off Delay Time
63ns
Turn-On Delay Time
45ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP50NF25 Datasheet
Download the complete datasheet for Stmicroelectronics STP50NF25 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
