
Stmicroelectronics STP52N25M5 technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 28A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 55mR |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 64ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 1.77nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Rds On Max | 65mR |
| RoHS Compliant | No |
| Series | MDmesh™ V |
| RoHS | Not CompliantNo |
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