The STP5N120 is a TO-220-3 flange mount N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 4.7A and a drain to source breakdown voltage of 1.2kV. The device has a drain to source resistance of 3.5R and a maximum power dissipation of 160W. It is packaged in a rail/Tube format and is lead free.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power160W
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Technical Specifications
Stmicroelectronics STP5N120 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 4.7A |
| Drain to Source Breakdown Voltage | 1.2kV |
| Drain to Source Resistance | 3.5R |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Drain-source On Resistance-Max | 3.5R |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 120pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 160W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 160W |
| Radiation Hardening | No |
| Rds On Max | 3.5R |
| RoHS Compliant | No |
| Series | SuperMESH™ |
| Turn-Off Delay Time | 42ns |
| Turn-On Delay Time | 18ns |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Stmicroelectronics STP5N120 Datasheet
Download the complete datasheet for Stmicroelectronics STP5N120 to view detailed technical specifications.
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