N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 1.26 Ohm typical drain-source resistance. This through-hole component offers a continuous drain current of 3.7A and a maximum power dissipation of 45W. Operating across a wide temperature range from -55°C to 150°C, it utilizes a TO-220 package. Key electrical characteristics include 165pF input capacitance and fast switching times with a 11.8ns turn-on delay.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP5N60M2 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
3.7A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
1.26R
Drain to Source Voltage (Vdss)
600V
Gate to Source Voltage (Vgs)
25V
Height
15.75mm
Input Capacitance
165pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
45W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
1.4R
RoHS Compliant
Yes
Series
MDmesh™ II Plus
Turn-Off Delay Time
70ns
Turn-On Delay Time
11.8ns
Weight
0.01164oz
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP5N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STP5N60M2 to view detailed technical specifications.
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