N-CHANNEL POWER MOSFET, TO-220AB package, featuring 950V drain-source breakdown voltage and 4A continuous drain current. Offers a maximum drain-source on-resistance of 3.5 ohms. Operates with a gate-source voltage up to 30V and a threshold voltage of 4V. Includes fast switching characteristics with turn-on delay of 17ns and fall time of 18ns. Maximum power dissipation is 90W, with operating temperatures from -55°C to 150°C. Through-hole mount, RoHS compliant.
Stmicroelectronics STP5N95K3 technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Breakdown Voltage | 950V |
| Drain to Source Resistance | 3R |
| Drain to Source Voltage (Vdss) | 950V |
| Drain-source On Resistance-Max | 3.5R |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 15.75mm |
| Input Capacitance | 460pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 90W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 90W |
| Radiation Hardening | No |
| Rds On Max | 3.5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH3™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 17ns |
| Width | 4.6mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STP5N95K3 to view detailed technical specifications.
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