The STP5NB80FP is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -65°C. It features a drain to source breakdown voltage of 800V and a continuous drain current of 5A. The device has a power dissipation of 40W and a gate to source voltage of 30V. It is available in a TO-220FP package with 3 pins and is suitable for through hole mounting.
MountingThrough Hole
PolarityN-CHANNEL
Power40W
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Technical Specifications
Stmicroelectronics STP5NB80FP technical specifications.
General
| Continuous Drain Current (ID) | 5A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 1.8R |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Turn-On Delay Time | 18ns |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Stmicroelectronics STP5NB80FP Datasheet
Download the complete datasheet for Stmicroelectronics STP5NB80FP to view detailed technical specifications.
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