N-channel SuperMESH™ Power MOSFET, 500V Drain to Source Breakdown Voltage, 4.4A Continuous Drain Current. Features 1.5 Ohm Max Drain to Source Resistance, 535pF Input Capacitance, and 3.75V Threshold Voltage. Designed for through-hole mounting in a TO-220-3 package, offering 25W Max Power Dissipation. Includes fast switching characteristics with 15ns Turn-On Delay and 15ns Fall Time. RoHS compliant.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power25W
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Technical Specifications
Stmicroelectronics STP5NK50ZFP technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 4.4A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 535pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 25W |
| Radiation Hardening | No |
| Rds On Max | 1.5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 15ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP5NK50ZFP Datasheet
Download the complete datasheet for Stmicroelectronics STP5NK50ZFP to view detailed technical specifications.
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