N-channel MOSFET featuring 520V drain-source breakdown voltage and 1.5 Ohm Rds On. This power transistor offers a continuous drain current of 4.4A and a maximum power dissipation of 70W. Available in TO-220, DPAK, I2PAK, and IPAK packages, it supports through-hole mounting and operates across a wide temperature range of -55°C to 150°C. Key switching characteristics include a 15ns fall time, 11.4ns turn-on delay, and 23.1ns turn-off delay.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power70W
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Technical Specifications
Stmicroelectronics STP5NK52ZD technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 4.4A |
| Drain to Source Breakdown Voltage | 520V |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 520V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 15.75mm |
| Input Capacitance | 529pF |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 70W |
| Radiation Hardening | No |
| Rds On Max | 1.5R |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Turn-Off Delay Time | 23.1ns |
| Turn-On Delay Time | 11.4ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP5NK52ZD Datasheet
Download the complete datasheet for Stmicroelectronics STP5NK52ZD to view detailed technical specifications.
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