N-CHANNEL Power MOSFET, TO-220AB package, featuring 30V Drain to Source Breakdown Voltage and 48A Continuous Drain Current. Offers a low Drain to Source On Resistance of 11.4mΩ at 4.2A, with a maximum of 8.4mΩ. Operates within a temperature range of -55°C to 175°C, with a maximum power dissipation of 60W. This RoHS compliant component is designed for through-hole mounting.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power60W
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Technical Specifications
Stmicroelectronics STP60N3LH5 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 48A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 11.4mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 8.4MR |
| Fall Time | 4.2ns |
| Gate to Source Voltage (Vgs) | 22V |
| Input Capacitance | 1.35nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 60W |
| Radiation Hardening | No |
| Rds On Max | 8.4mR |
| RoHS Compliant | Yes |
| Series | STripFET™ V |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 6ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP60N3LH5 Datasheet
Download the complete datasheet for Stmicroelectronics STP60N3LH5 to view detailed technical specifications.
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