N-channel power MOSFET featuring 80A continuous drain current and 55V drain-to-source breakdown voltage. Offers a low 8.5mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-220 package, this RoHS compliant component operates from -55°C to 175°C with a maximum power dissipation of 110W. Key switching characteristics include a 20ns turn-on delay and 11.5ns fall time.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power110W
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Technical Specifications
Stmicroelectronics STP60N55F3 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 8.5mR |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 8.5MR |
| Fall Time | 11.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.15mm |
| Input Capacitance | 2.2nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Rds On Max | 8.5mR |
| RoHS Compliant | Yes |
| Series | STripFET™ III |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 20ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP60N55F3 Datasheet
Download the complete datasheet for Stmicroelectronics STP60N55F3 to view detailed technical specifications.
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