N-channel power MOSFET featuring a 60V drain-source breakdown voltage and 60A continuous drain current. This component offers a low 14mΩ maximum drain-source on-resistance and 110W maximum power dissipation. Designed for through-hole mounting in a TO-220 package, it operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 15ns turn-on delay and 16ns fall time.
PackageTO-220
Current Rating60A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP65NF06 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
60A
Current Rating
60A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
14mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
14MR
Fall Time
16ns
Gate to Source Voltage (Vgs)
20V
Height
15.75mm
Input Capacitance
1.7nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
110W
Radiation Hardening
No
Rds On Max
14mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Threshold Voltage
4V
Turn-Off Delay Time
40ns
Turn-On Delay Time
15ns
DC Rated Voltage
60V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP65NF06 Datasheet
Download the complete datasheet for Stmicroelectronics STP65NF06 to view detailed technical specifications.
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