
N-channel power MOSFET featuring a 60V drain-source breakdown voltage and 60A continuous drain current. This component offers a low 14mΩ maximum drain-source on-resistance and 110W maximum power dissipation. Designed for through-hole mounting in a TO-220 package, it operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 15ns turn-on delay and 16ns fall time.
Stmicroelectronics STP65NF06 technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 60A |
| Current Rating | 60A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 14mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 14MR |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 15.75mm |
| Input Capacitance | 1.7nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Rds On Max | 14mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 60V |
| Width | 4.6mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STP65NF06 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
