N-channel Power MOSFET featuring 950V drain-source voltage and 9A continuous drain current. This through-hole component utilizes SuperMESH process technology and is housed in a TO-220AB package with 3 pins plus a tab. Maximum power dissipation is 90W, with a gate threshold voltage of 5V and a typical gate charge of 13nC. Operating temperature range is -55°C to 150°C.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STP6N95K5 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220AB
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.4(Max)
Package Width (mm)
4.6(Max)
Package Height (mm)
9.15(Max)
Seated Plane Height (mm)
19.68(Max)
Pin Pitch (mm)
2.7(Max)
Package Weight (g)
1.9
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-220AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
SuperMESH
Maximum Drain Source Voltage
950V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
9A
Maximum Gate Threshold Voltage
5V
Maximum Drain Source Resistance
1250@10VmOhm
Typical Gate Charge @ Vgs
13@10VnC
Typical Gate Charge @ 10V
13nC
Typical Input Capacitance @ Vds
450@100VpF
Maximum Power Dissipation
90000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCR76
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Stmicroelectronics STP6N95K5 Datasheet
Download the complete datasheet for Stmicroelectronics STP6N95K5 to view detailed technical specifications.
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