N-channel Power MOSFET with 900V drain-source breakdown voltage and 5.8A continuous drain current. Features 2 Ohm Rds On, 135W max power dissipation, and TO-220AB through-hole package. Operates from -65°C to 150°C with 1.4nF input capacitance and 15ns fall time.
PackageTO-220AB
Current Rating5.8A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP6NB90 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
5.8A
Current Rating
5.8A
Drain to Source Breakdown Voltage
900V
Drain to Source Resistance
2R
Drain to Source Voltage (Vdss)
900V
Fall Time
15ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
1.4nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
135W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
135W
Radiation Hardening
No
Rds On Max
2R
RoHS Compliant
No
Series
PowerMESH™
Turn-On Delay Time
20ns
DC Rated Voltage
900V
Compliance
RoHS
Not CompliantNo
Datasheet
Stmicroelectronics STP6NB90 Datasheet
Download the complete datasheet for Stmicroelectronics STP6NB90 to view detailed technical specifications.
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