N-channel Power MOSFET with 900V drain-source breakdown voltage and 5.8A continuous drain current. Features 2 Ohm Rds On, 135W max power dissipation, and TO-220AB through-hole package. Operates from -65°C to 150°C with 1.4nF input capacitance and 15ns fall time.
PackageTO-220AB
Current Rating5.8A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP6NB90 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 5.8A |
| Current Rating | 5.8A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | 900V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 135W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 135W |
| Radiation Hardening | No |
| Rds On Max | 2R |
| RoHS Compliant | No |
| Series | PowerMESH™ |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 900V |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Stmicroelectronics STP6NB90 Datasheet
Download the complete datasheet for Stmicroelectronics STP6NB90 to view detailed technical specifications.
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