N-channel power MOSFET with 500V drain-source breakdown voltage and 5.6A continuous drain current. Features 1.2 ohm maximum drain-source on-resistance and 90W maximum power dissipation. Operates within a temperature range of -55°C to 150°C. Packaged in a TO-220 through-hole mount with 3 pins. RoHS compliant.
PackageTO-220
Current Rating5.6A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP6NK50Z technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 5.6A |
| Current Rating | 5.6A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 1.2R |
| Fall Time | 23ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 15.75mm |
| Input Capacitance | 690pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 90W |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 90W |
| Radiation Hardening | No |
| Rds On Max | 1.2R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 500V |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP6NK50Z Datasheet
Download the complete datasheet for Stmicroelectronics STP6NK50Z to view detailed technical specifications.
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