
N-channel SuperMESH™ Power MOSFET, 600V drain-source breakdown voltage, 1.2Ω max drain-source on-resistance, and 6A continuous drain current. Features a TO-220 package for through-hole mounting, 110W max power dissipation, and Zener protection. Operates from -55°C to 150°C with a 3.75V threshold voltage. RoHS compliant.
Stmicroelectronics STP6NK60Z technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 6A |
| Current Rating | 6A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 1.2R |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.15mm |
| Input Capacitance | 905pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Rds On Max | 1.2R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 47ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 600V |
| Width | 4.6mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STP6NK60Z to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.