N-CHANNEL POWER MOSFET, TO-220 package, featuring 600V drain-source breakdown voltage and 4.6A continuous drain current. Offers 920mΩ maximum drain-source on-resistance and 45W power dissipation. Designed for through-hole mounting with a 3-pin configuration. Includes a 25V gate-to-source voltage rating and 420pF input capacitance. Operates across a temperature range of -55°C to 150°C.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power45W
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Technical Specifications
Stmicroelectronics STP6NM60N technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 4.6A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 920mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 920mR |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 420pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 45W |
| Radiation Hardening | No |
| Rds On Max | 920mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Turn-Off Delay Time | 40ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP6NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STP6NM60N to view detailed technical specifications.
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