N-channel MOSFET with 200V drain-source breakdown voltage and 75A continuous drain current. Features low 34mΩ drain-source on-resistance and 190W maximum power dissipation. Packaged in a TO-220AB through-hole mount, this component offers fast switching with turn-on delay of 53ns and turn-off delay of 75ns. Operates across a wide temperature range from -55°C to 150°C, with lead-free and RoHS compliance.
PackageTO-220AB
Current Rating75A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP75N20 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 75A |
| Current Rating | 75A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 34mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 29ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.26nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 190W |
| Radiation Hardening | No |
| Rds On Max | 34mR |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 53ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP75N20 Datasheet
Download the complete datasheet for Stmicroelectronics STP75N20 to view detailed technical specifications.
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