N-channel power MOSFET featuring 200V drain-source breakdown voltage and 75A continuous drain current. Offers a low 0.028 Ohm typical drain-source on-resistance. Housed in a TO-220 package for through-hole mounting, this device boasts a maximum power dissipation of 190W and operates within a temperature range of -50°C to 150°C. Includes fast switching characteristics with turn-on delay of 53ns and fall time of 29ns.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power190W
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Technical Specifications
Stmicroelectronics STP75NF20 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
75A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
34mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
5.9MR
Fall Time
29ns
Gate to Source Voltage (Vgs)
20V
Height
15.75mm
Input Capacitance
3.26nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-50°C
Max Power Dissipation
190W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
190W
Radiation Hardening
No
Rds On Max
34mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Threshold Voltage
3V
Turn-Off Delay Time
75ns
Turn-On Delay Time
53ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP75NF20 Datasheet
Download the complete datasheet for Stmicroelectronics STP75NF20 to view detailed technical specifications.
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