The STP75NF68 is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 175°C. It features a drain to source breakdown voltage of 68V and a continuous drain current of 80A. The device has a maximum power dissipation of 190W and a drain to source resistance of 14mR. It is packaged in a TO-220-3 package and is available in a rail/Tube packaging format. The STP75NF68 is a RoHS compliant device.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power190W
Quick Jump:
Technical Specifications
Stmicroelectronics STP75NF68 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 68V |
| Drain to Source Resistance | 14mR |
| Drain to Source Voltage (Vdss) | 68V |
| Fall Time | 75ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.55nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 190W |
| Radiation Hardening | No |
| Rds On Max | 14mR |
| RoHS Compliant | Yes |
| Series | STripFET™ II |
| Turn-Off Delay Time | 90ns |
| Turn-On Delay Time | 17ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP75NF68 Datasheet
Download the complete datasheet for Stmicroelectronics STP75NF68 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
