Stmicroelectronics
STP77N6F6
N-channel 60 V, 0.0063 Ohm typ., 77 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a TO-220 package
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power80W
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Technical Specifications
Stmicroelectronics STP77N6F6 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 77A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 7.9mR |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.3nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 80W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 80W |
| Radiation Hardening | No |
| Rds On Max | 7mR |
| RoHS Compliant | Yes |
| Series | DeepGATE™, STripFET™ VI |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP77N6F6 Datasheet
Download the complete datasheet for Stmicroelectronics STP77N6F6 to view detailed technical specifications.
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