N-channel Power MOSFET featuring 950V drain-source breakdown voltage and 7.2A continuous drain current. Offers a low 1.35 Ohm maximum drain-source on-resistance. This SuperMESH3™ MOSFET is housed in a TO-220 package with through-hole mounting and a maximum power dissipation of 150W. Includes Zener protection and operates within a temperature range of -55°C to 150°C.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power150W
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Technical Specifications
Stmicroelectronics STP7N95K3 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 7.2A |
| Drain to Source Breakdown Voltage | 950V |
| Drain to Source Resistance | 1.35R |
| Drain to Source Voltage (Vdss) | 950V |
| Drain-source On Resistance-Max | 1.35R |
| Fall Time | 23ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 15.75mm |
| Input Capacitance | 1.031nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 1.35R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH3™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 36ns |
| Turn-On Delay Time | 14ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP7N95K3 Datasheet
Download the complete datasheet for Stmicroelectronics STP7N95K3 to view detailed technical specifications.
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