N-Channel Power MOSFET, TO-220 package, featuring 600V drain-source breakdown voltage and 5A continuous drain current. Offers a maximum drain-source on-resistance of 900mΩ. Operates with a gate-source voltage up to 25V and a threshold voltage of 3V. Includes fast switching characteristics with a fall time of 12ns and turn-off delay of 26ns. Maximum power dissipation is 45W, with operating temperatures from -55°C to 150°C. RoHS compliant and designed for through-hole mounting.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power45W
Quick Jump:
Technical Specifications
Stmicroelectronics STP7NM60N technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
5A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
900mR
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
900mR
Fall Time
12ns
Gate to Source Voltage (Vgs)
25V
Height
15.75mm
Input Capacitance
363pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
45W
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
45W
Radiation Hardening
No
Rds On Max
900mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™ II
Threshold Voltage
3V
Turn-Off Delay Time
26ns
Turn-On Delay Time
7ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP7NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STP7NM60N to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
