N-channel power MOSFET featuring 800V drain-source breakdown voltage and 6.5A continuous drain current. Offers a low 1.05 Ohm maximum drain-source on-resistance. Housed in a TO-220 package for through-hole mounting, this component boasts a 90W maximum power dissipation and operates within a -55°C to 150°C temperature range. Includes fast switching characteristics with typical turn-on delay of 20ns and fall time of 10ns.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power90W
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Technical Specifications
Stmicroelectronics STP7NM80 technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 6.5A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 1.05R |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 1.05R |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 15.75mm |
| Input Capacitance | 620pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 90W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 90W |
| Radiation Hardening | No |
| Rds On Max | 1.05R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 20ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP7NM80 Datasheet
Download the complete datasheet for Stmicroelectronics STP7NM80 to view detailed technical specifications.
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