N-channel power MOSFET featuring 800V drain-source breakdown voltage and 6.5A continuous drain current. Offers a low 1.05 Ohm maximum drain-source on-resistance. Housed in a TO-220 package for through-hole mounting, this component boasts a 90W maximum power dissipation and operates within a -55°C to 150°C temperature range. Includes fast switching characteristics with typical turn-on delay of 20ns and fall time of 10ns.
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power90W
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Technical Specifications
Stmicroelectronics STP7NM80 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
6.5A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
1.05R
Drain to Source Voltage (Vdss)
800V
Drain-source On Resistance-Max
1.05R
Fall Time
10ns
Gate to Source Voltage (Vgs)
30V
Height
15.75mm
Input Capacitance
620pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
90W
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
90W
Radiation Hardening
No
Rds On Max
1.05R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Threshold Voltage
4V
Turn-Off Delay Time
35ns
Turn-On Delay Time
20ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP7NM80 Datasheet
Download the complete datasheet for Stmicroelectronics STP7NM80 to view detailed technical specifications.
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