N-channel power MOSFET featuring 100V drain-source breakdown voltage and 80A continuous drain current. Offers low on-resistance of 8.5mΩ typical (10mΩ max) and 110W maximum power dissipation. Packaged in a TO-220-3 through-hole mount with a 175°C maximum operating temperature. Includes fast switching characteristics with turn-on delay of 19ns and fall time of 13ns.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP80N10F7 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
80A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
10mR
Drain to Source Voltage (Vdss)
100V
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Height
4.6mm
Input Capacitance
3.1nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
10mR
RoHS Compliant
Yes
Series
DeepGATE™, STripFET™ VII
Turn-Off Delay Time
36ns
Turn-On Delay Time
19ns
Weight
0.01164oz
Width
15.75mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP80N10F7 Datasheet
Download the complete datasheet for Stmicroelectronics STP80N10F7 to view detailed technical specifications.
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