N-channel power MOSFET featuring 200V drain-source breakdown voltage and 61A continuous drain current. Offers a low 23mΩ drain-source on-resistance and 190W maximum power dissipation. Designed for through-hole mounting in a TO-220 package, this RoHS compliant component operates from -55°C to 150°C. Key switching characteristics include a 176ns fall time and 131ns turn-off delay time.
PackageTO-220
Voltage200V
Current61A
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STP80N20M5 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
61A
Current
61A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
23mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
23MR
Fall Time
176ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
4.329nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
190W
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
190W
Rds On Max
23mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™ V
Threshold Voltage
4V
Turn-Off Delay Time
131ns
Voltage
200V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP80N20M5 Datasheet
Download the complete datasheet for Stmicroelectronics STP80N20M5 to view detailed technical specifications.
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