Stmicroelectronics
STP80N70F6
N-channel 68 V, 0.0052 Ohm, 96 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package
PackageTO-220
MountingThrough Hole
PolarityN-CHANNEL
Power110W
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Technical Specifications
Stmicroelectronics STP80N70F6 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
96A
Drain to Source Breakdown Voltage
68V
Drain to Source Resistance
8mR
Drain to Source Voltage (Vdss)
68V
Fall Time
23ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
5.85nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
110W
Mount
Through Hole
Number of Elements
1
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
110W
Radiation Hardening
No
Rds On Max
8mR
RoHS Compliant
Yes
Series
DeepGATE™, STripFET™ VI
Turn-Off Delay Time
102ns
Turn-On Delay Time
23ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP80N70F6 Datasheet
Download the complete datasheet for Stmicroelectronics STP80N70F6 to view detailed technical specifications.
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