
N-CHANNEL MOSFET, STripFET™ II series, featuring 120V drain-source breakdown voltage and a maximum continuous drain current of 80A. This through-hole mounted component offers a low drain-source on-resistance of 18mR at 10V Vgs. Operating across a wide temperature range from -55°C to 175°C, it supports a maximum power dissipation of 300W. The TO-220 package houses a single N-channel element with a gate-source voltage rating of 20V.
Stmicroelectronics STP80NF12 technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 80A |
| Current Rating | 80A |
| Drain to Source Breakdown Voltage | 120V |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | 120V |
| Drain-source On Resistance-Max | 18mR |
| Fall Time | 115ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 15.75mm |
| Input Capacitance | 4.3nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 18mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 134ns |
| Turn-On Delay Time | 40ns |
| DC Rated Voltage | 120V |
| Width | 4.6mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STP80NF12 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
