N-CHANNEL MOSFET, STripFET™ II series, featuring 120V drain-source breakdown voltage and a maximum continuous drain current of 80A. This through-hole mounted component offers a low drain-source on-resistance of 18mR at 10V Vgs. Operating across a wide temperature range from -55°C to 175°C, it supports a maximum power dissipation of 300W. The TO-220 package houses a single N-channel element with a gate-source voltage rating of 20V.
PackageTO-220
Current Rating80A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP80NF12 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
80A
Current Rating
80A
Drain to Source Breakdown Voltage
120V
Drain to Source Resistance
18mR
Drain to Source Voltage (Vdss)
120V
Drain-source On Resistance-Max
18mR
Fall Time
115ns
Gate to Source Voltage (Vgs)
20V
Height
15.75mm
Input Capacitance
4.3nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Number of Elements
1
Package Quantity
1
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Rds On Max
18mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Threshold Voltage
2V
Turn-Off Delay Time
134ns
Turn-On Delay Time
40ns
DC Rated Voltage
120V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP80NF12 Datasheet
Download the complete datasheet for Stmicroelectronics STP80NF12 to view detailed technical specifications.
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