N-channel power MOSFET featuring 55V drain-source breakdown voltage and 80A continuous drain current. This component offers a low 6.5mΩ drain-source on-resistance, enabling efficient power switching. Designed for through-hole mounting in a TO-220 package, it operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 300W. Key switching characteristics include a 27ns turn-on delay and a 65ns fall time.
PackageTO-220
Current Rating80A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP80NF55-06 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
80A
Current Rating
80A
Drain to Source Breakdown Voltage
55V
Drain to Source Resistance
6.5mR
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
6.5mR
Fall Time
65ns
Gate to Source Voltage (Vgs)
20V
Height
9.15mm
Input Capacitance
4.4nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Number of Elements
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Radiation Hardening
No
Rds On Max
6.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™ II
Threshold Voltage
3V
Turn-Off Delay Time
125ns
Turn-On Delay Time
27ns
DC Rated Voltage
55V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP80NF55-06 Datasheet
Download the complete datasheet for Stmicroelectronics STP80NF55-06 to view detailed technical specifications.
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