
N-Channel Power MOSFET featuring 55V drain-source breakdown voltage and 80A continuous drain current. This TO-220 packaged component offers a low 8mΩ maximum drain-source on-resistance. With a 300W maximum power dissipation and a wide operating temperature range of -55°C to 175°C, it is designed for high-power applications. Key switching characteristics include a 25ns fall time, 20ns turn-on delay, and 75ns turn-off delay. This RoHS compliant device is suitable for through-hole mounting.
Stmicroelectronics STP80NF55-08 technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 80A |
| Current Rating | 80A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 8mR |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 8mR |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 15.75mm |
| Input Capacitance | 3.85nF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | 55V |
| Width | 4.6mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STP80NF55-08 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
