N-Channel Power MOSFET featuring 55V drain-source breakdown voltage and 80A continuous drain current. This TO-220 packaged component offers a low 8mΩ maximum drain-source on-resistance. With a 300W maximum power dissipation and a wide operating temperature range of -55°C to 175°C, it is designed for high-power applications. Key switching characteristics include a 25ns fall time, 20ns turn-on delay, and 75ns turn-off delay. This RoHS compliant device is suitable for through-hole mounting.
PackageTO-220
Current Rating80A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP80NF55-08 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
80A
Current Rating
80A
Drain to Source Breakdown Voltage
55V
Drain to Source Resistance
8mR
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
8mR
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Height
15.75mm
Input Capacitance
3.85nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
300W
Radiation Hardening
No
Rds On Max
8mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Threshold Voltage
3V
Turn-Off Delay Time
75ns
Turn-On Delay Time
20ns
DC Rated Voltage
55V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP80NF55-08 Datasheet
Download the complete datasheet for Stmicroelectronics STP80NF55-08 to view detailed technical specifications.
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