N-channel Power MOSFET featuring 650V drain-source voltage and 7A continuous drain current. This single-element silicon transistor utilizes MDmesh V process technology and offers a low 600mΩ drain-source resistance at 10V. Packaged in a TO-220AB through-hole configuration with 3 pins, it supports a maximum power dissipation of 70W and operates across a wide temperature range of -55°C to 150°C.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STP8N65M5 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220AB
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.4(Max)
Package Width (mm)
4.6(Max)
Package Height (mm)
9.15(Max)
Seated Plane Height (mm)
19.68(Max)
Pin Pitch (mm)
2.7(Max)
Package Weight (g)
1.9
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-220AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
MDmesh V
Maximum Drain Source Voltage
650V
Maximum Gate Source Voltage
±25V
Maximum Continuous Drain Current
7A
Material
Si
Maximum Drain Source Resistance
600@10VmOhm
Typical Gate Charge @ Vgs
15@10VnC
Typical Gate Charge @ 10V
15nC
Typical Input Capacitance @ Vds
690@100VpF
Maximum Power Dissipation
70000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCR76
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU
Datasheet
Stmicroelectronics STP8N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STP8N65M5 to view detailed technical specifications.
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