N-channel Power MOSFET, 800V Drain to Source Breakdown Voltage, 6A Continuous Drain Current, and 950mΩ Max Drain-Source On Resistance. Features a TO-220-3 package for through-hole mounting, 150°C max operating temperature, and 110W max power dissipation. Includes fast switching characteristics with typical fall time of 20ns, turn-off delay of 32ns, and turn-on delay of 12ns. Input capacitance is 450pF, with a 30V Gate to Source Voltage rating. RoHS compliant and lead-free.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP8N80K5 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 950mR |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 950mR |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 15.75mm |
| Input Capacitance | 450pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 950mR |
| RoHS Compliant | Yes |
| Series | SuperMESH5™ |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 12ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP8N80K5 Datasheet
Download the complete datasheet for Stmicroelectronics STP8N80K5 to view detailed technical specifications.
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