Stmicroelectronics
STP8NM60D
8A, 600V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power100W
Quick Jump:
Technical Specifications
Stmicroelectronics STP8NM60D technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 1R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 380pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Rds On Max | 1R |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Turn-Off Delay Time | 26ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP8NM60D Datasheet
Download the complete datasheet for Stmicroelectronics STP8NM60D to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
