The STP8NM60D is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -65°C. It features a drain to source breakdown voltage of 600V and a continuous drain current of 8A. The device is packaged in a TO-220AB flange mount package and is lead free and RoHS compliant. It has a maximum power dissipation of 100W and a gate to source voltage of 30V.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power100W
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Technical Specifications
Stmicroelectronics STP8NM60D technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 1R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 380pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Rds On Max | 1R |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Turn-Off Delay Time | 26ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP8NM60D Datasheet
Download the complete datasheet for Stmicroelectronics STP8NM60D to view detailed technical specifications.
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