STMICROELECTRONICS

STP8NM60FP

Datasheet

600V 8A N-CH MOSFET, 1 Ohm, TO-220FP, Power Transistor

Stmicroelectronics

STP8NM60FP

Name: STP8NM60FP Stmicroelectronics
Brand: Stmicroelectronics
SKU: STP8NM60FP

600V 8A N-CH MOSFET, 1 Ohm, TO-220FP, Power Transistor

N-channel power MOSFET featuring 600V drain-source breakdown voltage and 8A continuous drain current. This through-hole component offers a low 1-ohm drain-source on-resistance and a maximum power dissipation of 30W. Operating across a wide temperature range from -55°C to 150°C, it boasts fast switching characteristics with turn-on delay of 14ns and fall time of 10ns. Packaged in TO-220AB or TO-220FP, this RoHS compliant device is ideal for power switching applications.

PackageTO-220-3

Current Rating8A

MountingThrough Hole

PolarityN-CHANNEL

Quick Jump:

Technical Specifications

Stmicroelectronics STP8NM60FP technical specifications.

General

Package/Case	TO-220-3
Continuous Drain Current (ID)	8A
Current Rating	8A
Drain to Source Breakdown Voltage	600V
Drain to Source Resistance	1R
Drain to Source Voltage (Vdss)	650V
Drain-source On Resistance-Max	1R
Fall Time	10ns
Gate to Source Voltage (Vgs)	30V
Input Capacitance	400pF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	30W
Mount	Through Hole
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	30W
Radiation Hardening	No
Rds On Max	1R
RoHS Compliant	Yes
Series	MDmesh™
Turn-Off Delay Time	23ns
Turn-On Delay Time	14ns
DC Rated Voltage	650V