Stmicroelectronics
STP8NM60N
7A, 600V, 0.65ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power70W
Quick Jump:
Technical Specifications
Stmicroelectronics STP8NM60N technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 650mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 650mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 560pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 70W |
| Rds On Max | 650mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II |
| Turn-Off Delay Time | 40ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP8NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STP8NM60N to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
