The STP8NM60ND is a N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 7A and a drain to source breakdown voltage of 600V. The device is packaged in a TO-220-3 flange mount package and is RoHS compliant. It is suitable for high-power applications and has a maximum power dissipation of 70W.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power70W
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Technical Specifications
Stmicroelectronics STP8NM60ND technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 7A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 700mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 560pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 70W |
| Radiation Hardening | No |
| Rds On Max | 700mR |
| RoHS Compliant | Yes |
| Series | FDmesh™ II |
| Turn-Off Delay Time | 37ns |
| Turn-On Delay Time | 9ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP8NM60ND Datasheet
Download the complete datasheet for Stmicroelectronics STP8NM60ND to view detailed technical specifications.
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